for a mosfet in common source configuration
voltage gain A_mos = -gm*(ro||RD||RL)
and for a BJT in common emitter configuration,
A_bjt = -gm*(ro||RC||RL)
where, ro = output resistance = VA/IC or ID, VA=early voltage, IC=bias collector current and gm =transconductance parameter
considering RC=RD and load, RL to be the same, what can be said about the relative values of A_mos and A_bjt. What would be the comparitive relation between the values of gm and ro of both devices in general.?
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