Process sequence for fabricating Poly Gate

I am wondering the "correct" sequence for fabricating a layer of gate oxide and poly gate on a bare silicon substrate. The substrate is also implanted with boron. So this is my thinking: bare silicon substrate -> coated with photoresist -> selectively exposed -> exposed region implanted with boron -> then strip the unexposed photoresist. At this point, I am confused on how to proceed to build the layer of gate oxide on which the poly gate is directly built. I will appreciate guidance on how to proceed to build the structure further.